Temperature-independent thermal radiation, P. Roney, A. Shahsafi, Y. Zhou, Z. Zhang, Y. Xiao, C. Wan, R. Wambold, J. Salman, Z. Yu, J. Li, J. T. Sadowski, R. Comin, S. Ramanathan and M. A. Kats, (arXiv:1902.00252, 2019) February 2019 /0 Comments/in Publications, Selected Journal Publications /by Shriram Ramanathan
Beyond electrostatic modification: design and discovery of functional oxide phases by ionic-electronic doping, H. T. Zhang, Z. Zhang, H. Zhou, H. Tanaka, D. D. Fong and S. Ramanathan, Advances in Physics X, 4:1, Article: 1523686 (2019) January 2019 /0 Comments/in Selected Journal Publications /by Shriram Ramanathan
Optical properties of thin-film vanadium dioxide from the visible to the far infrared, C. Wan, Z. Zhang, D. Woolf, C. M. Hessel, J. Rensburg, J. M. Hensley, Y. Zhao, A. Shahsafi, J. Salman, S. Richter, Y. Sun, M. M. Qazilbash, R. Schmidt-Grund, C. Ronning, S. Ramanathan and M. A. Kats (arXiv:1901.02517, 2019) January 2019 /0 Comments/in Selected Journal Publications /by Shriram Ramanathan
Jerome Lin’s VO2 paper selected by Emerging Technology, MIT Technology Review as Best of Physics arxiv (9/8, 2018) November 2018 /0 Comments/in News /by Shriram Ramanathan
Proton doping and characterization of rare earth nickelates, Derek Schwanz, Purdue University, 2018 November 2018 /0 Comments/in Ph.D. Dissertation Supervised /by Shriram Ramanathan
Vanadium dioxide circuits emulate neurological disorders, J. Lin, S. Guha and S. Ramanathan, Frontiers in Neuroscience, 12, Art. 856 (2018) August 2018 /0 Comments/in Selected Journal Publications /by Shriram Ramanathan
Strongly correlated perovskite lithium ion shuttles, Y. Sun, M. Kotiuga, D. Lim, B. Narayanan, M. Cherukara, Z. Zhang, Y. Dong, R. Kou, C. J. Sun, Q. Lu, I. Waluyo, A. Hunt, H. Tanaka, A. N. Hattori, S. Gamage, Y/ Abate, V. G. Pol, H. Zhou, S. K. R. S. Sankaranarayanan, B. Yildiz, K. M. Rabe, and S. Ramanathan, Proceedings of the National Academy of Sciences of the USA, 115, 9672 (2018) August 2018 /0 Comments/in Selected Journal Publications /by Shriram Ramanathan
Proton-doped strongly correlated perovskite nickelate memory devices, K. Ramadoss, F. Zuo, Y. Sun, Z. Zhang, J. Lin, U. Bhaskar, S. Shin, M. A. Alam, S. Guha, D. Weinstein and S. Ramanathan, arXiv:1805.00527, IEEE Electron Device Letters 39, 1500 (2018) August 2018 /0 Comments/in Selected Journal Publications /by Shriram Ramanathan
Electrically-Driven Insulator-Metal Transition Based Devices, Part II: Transient Characteristics, J. Lin, S. Ramanathan and S. Guha, IEEE Transactions on Electron Devices 65, 3989 (2018) July 2018 /0 Comments/in Selected Journal Publications /by Shriram Ramanathan
