2022
  • Carrier doping physics of rare earth perovskite nickelates, J. Li, S. Ramanathan and R. Comin, Frontiers in Physics (in press, 2022)
  • First demonstration of robust tri-gate b-Ga2O3 nano-membrane field effect transistors, H. Bae, T. J. Park, J. Noh, W. Chung, M. Si, S. Ramanathan and P. D. Ye, Nanotechnology 33, 125201 (2022)
    • 2021
    • Cation and anion topotactic transformations in cobaltite thin films leading to Ruddlesden-Popper phases, I. T. Chiu, M. H. Lee, S. Cheng, S. Zhang, L. Heki, Z. Zhang, Y. Mohtashami, P. N. Lapa, M. Feng, P. Shafer, A. T. N’Diaye, A. Mehta, J. A. Schuller, G. Galli, S. Ramanathan, Y. Zhu, I. K. Schuller and Y. Takamura, Physical Review Materials 5, 064416 (2021); Editor’s Suggestion
    • Perovskite nickelate actuators, C. Huang, J. Anderson, S. Paena, X. Chen, S. Ramanathan and D. Weinstein, IEEE Journal of Microelectromechanical Systems, 30, 488 (2021)
    • Sudden collapse of magnetic order in oxygen deficient nickelate films, J. Li, R. J. Green, Z. Zhang, R. Sutarto, J. T. Sadowski, Z. Zhu, G. Zhang, D. Zhou, Y. Sun, F. He, S. Ramanathan and R. Comin, Physical Review Letters, 126, 187602 (2021)
    • Neuromorphic learning with Mott insulator NiO, Z. Zhang, S. Mondal, S. Mandal, J. M. Allred, N. A. Aghamiri, A. Fali, Z. Zhang, H. Zhou, H. Cao, F. Rodolakis, J. L. McChesney, Q. Wang, Y. Sun, Y. Abate, K. Roy, K. M. Rabe and S. Ramanathan, Proceedings of the National Academy of Sciences of the USA, 118, e2017239118 (2021)
    • Low-temperature emergent neuromorphic networks with correlated oxide devices, U. S. Goteti, I. A. Zaluzhnyy, S. Ramanathan, R. C. Dynes and A. Frano, Proceedings of the National Academy of Sciences of the USA, 118, e2103934118 (2021)
    • Dynamics of voltage-driven oscillating insulator-metal transitions, Y. Shi, A. E. Duwel, D. M. Callahan, Y. Sun, F. A. Hong, H. Padmanabhan, V. Gopalan, R. Engel-Herbert, S. Ramanathan and L-Q. Chen, Physical Review B, 104, 064308 (2021)
    • Proton distribution visualization in perovskite devices utilizing nanofocused X-rays, I. A. Zaluzhnyy, P. O. Sprau, R. Tran, Q. Wang, H. T. Zhang, Z. Zhang, T. J. Park, N. Hua, B. Stoychev, M. J. Cherukara, M. V. Holt, E. Nazraretski, X. Huang, H. Yan, A. Pattammattel, Y. S. Chu, S. P. Ong, S. Ramanathan, O. Shpyrko and A. Frano, Physical Review Materials, 5, 095003 (2021)
    • Universal phase dynamics in VO2 switches revealed by ultrafast operando diffraction, A. Sood, X. Shen, Y. Shi, S. Kumar, S. J. Park, M. Zajac, Y. Sun, L. Q. Chen, S. Ramanathan, X. Wang, W. C. Chueh and A. M. Lindenberg, Science, 373, 352 (2021)
    • Ultrathin broadband reflective optical limiter, C. Wan, Z. Zhang, J. Salman, J. King, Y. Xiao, Z. Yu, A. Shahsafi, R. Wambold, S. Ramanathan and M. A. Kats, Laser and Photonics Reviews, in press (https://doi.org/10.1002/lpor.202100001, 2021)
    • Effective reduction of PdCoO2 thin films via hydrogenation and sign tunable anomalous Hall effect, G. Rimal, C. Schmidt, H. Hijazi, L. C. Feldman, Y. Liu, E. Skoropota, J. Lapano, M. Brahlek, D. Mukherjee, R. R. Unocic, M. F. Chisholm, Y. Sun, H. Yu, S. Ramanathan, C. J. Sun, H. Zhou and S. Oh, Physical Review Materials 5, L052001 (2021)
    • A. Tripathi, J. John, S. Kruk, Z. Zhang, H. Nguyen, L. Berguiga, P. R. Romeo, R. Orobtchouk, S. Ramanathan, Y. Kivshar and S. Cueff, Tunable Mie-resonant dielectric metasurfaces based on VO2 phase-transition materials, ACS Photonics, 8, 1206 (2021)
  • First experimental demonstration of robust HZO/Ga2O3 ferroelectric field-effect transistors as synaptic devices for artificial intelligence applications, J. Noh, H. Bae, J. Li, Y. Luo, Y. Qu, T. J. Park, M. Si, X. Chen, A. R. Charnas, W. Chung, X. Peng, S. Ramanathan, S. Yu and P. D. Ye, IEEE Transactions on Electron Devices, 68, 2515 (2021)
    • 2020
    • Tunable catalysis via insulator-metal transition, Y. Sun and S. Ramanathan, Nature Catalysis 3, 609 (2020)
    • VO2 nanophotonics, S. Cueff, J. John, Z. Zhang, J. Parra, J. Sun, R. Orobtchouk, S. Ramanathan and P. Sanchis, APL Photonics, 5, 110901 (2020); Editor’s Feature Article
    • Catalytic hydrogen doping of NdNiO3 thin films under electric fields, U. Sidik, A. Hattori, R. Rakshit, S. Ramanathan and H. Tanaka, ACS Applied Materials and Interfaces, 12, 54955 (2020)
    • Perovskite neural trees, H. T. Zhang, T. J. Park, I. A. Zaluzhnyy, Q. Wang, S. N. Wadekar, S. Manna, R. Andrawis, P. O. Sprau, Y. Sun, Z. Zhang, C. Huang, H. Zhou, Z. Zhang, B. Narayanan, G. Srinivasan, N. Hua, E. Nazaretski, X. Huang, H. Yan, M. Ge, Y. S. Chu, M. J. Cherukara, M. V. Holt, M. Krishnamurthy, O. G. Shpyrko, S. K. R. S. Sankaranarayanan, A. Frano, K. Roy and S. Ramanathan, Nature Communications, 11, 2245 (2020)
    • In vivo glutamate sensing inside the mouse brain with perovskite nickelate – nafion heterostructures, Y. Sun, T. N. H. Nguyen, A. Anderson, X. Cheng, T. E. Gage, J. Lim, Z. Zhang, H. Zhou, F. Rodolakis, Z. Zhang, I. Arslan, S. Ramanathan, H. Lee and A. A. Chubykin, ACS Applied Materials and Interfaces, 12, 24564 (2020)
    • Multipolar resonances with designer tunability using VO2 phase change materials, J. John, Y. Gutierrez, Z. Zhang, H. Karl, S. Ramanathan, R. Orobtchouk, F. Moreno and S. Cueff, Physical Review Applied, 13, 044053 (2020)
    • VO2 switch for electrostatic discharge protection, S. M. Bohaichuk, M. M. Pelella, Y. Sun, Z. Zhang, S. Ramanathan and E. Pop, IEEE Electron Device Letters, 41, 292 (2020)
  • Organismic materials for beyond Von Neumann machines, H. T. Zhang, P. Panda, J. Lin, Y. Kalcheim, K. Wang, J. W. Freeland, D. D. Fong, S. Priya, I. K. Schuller, S. K. R. S. Sankaranarayanan, K. Roy and S. Ramanathan, Applied Physics Reviews, 7, 011309 (2020); Editor’s Suggestion; Journal Cover
    • 2019
    • Temperature-independent thermal radiation, P. Roney, A. Shahsafi, Y. Zhou, Z. Zhang, Y. Xiao, C. Wan, R. Wambold, J. Salman, Z. Yu, J. Li, J. T. Sadowski, R. Comin, S. Ramanathan and M. A. Kats, Proceedings of the National Academy of Sciences of the USA, 116, 26402 (2019)
    • Carrier localization in perovskite nickelates from oxygen vacancies, M. Kotiuga, Z. Zhang, J. Li, F. Rodolakis, H. Zhou, R. Sutarto, F. He, Q. Wang, Y. Sun, Y. Wang, N. A. Aghamiri, S. B. Hancock, L. P. Rokhinson, D. P. Landau, Y. Abate, J. W. Freeland, R. Comin, S. Ramanathan and K. M. Rabe, Proceedings of the National Academy of Sciences of the USA, 116, 21992 (2019)
    • VO2 phase transition-based vertical MEMS micro-actuators, C. Huang, Z. Zhang, S. Ramanathan and D. Weinstein, IEEE Transactions on Electron Devices 66, 4380 (2019)
    • Marine biology requires new line of inquiry in materials research, Z. Zhang, B. Robison and S. Ramanathan, MRS Bulletin 44, 597 (2019)
    • Perovskite nickelates as bio-electronic interfaces, H. T. Zhang, F. Zuo, F. Li, H. Chan, Q. Wu, Z. Zhang, B. Narayanan, K. Ramadoss, I. Chakraborty, G. Saha, G. Kamath, K. Roy, H. Zhou, A. A. Chubykin, S. K. R. S. Sankaranarayanan, J. H. Choi and S. Ramanathan, Nature Communications, 10, 1651 (2019)
    • Beyond electrostatic modification: design and discovery of functional oxide phases by ionic-electronic doping, H. T. Zhang, Z. Zhang, H. Zhou, H. Tanaka, D. D. Fong and S. Ramanathan, Advances in Physics X, 4:1, Article: 1523686 (2019)
  • On the optical properties of thin-film vanadium dioxide from the visible to the far infrared, C. Wan, Z. Zhang, D. Woolf, C. M. Hessel, J. Rensburg, J. M. Hensley, Y. Zhao, A. Shahsafi, J. Salman, S. Richter, Y. Sun, M. M. Qazilbash, R. Schmidt-Grund, C. Ronning, S. Ramanathan and M. A. Kats, Annalen der Physik, 531, 1900188 (2019)
    • 2018
    • Vanadium dioxide circuits emulate neurological disorders, J. Lin, S. Guha and S. Ramanathan, Frontiers in Neuroscience, 12, Art. 856 (2018)
    • Strongly correlated perovskite lithium ion shuttles, Y. Sun, M. Kotiuga, D. Lim, B. Narayanan, M. Cherukara, Z. Zhang, Y. Dong, R. Kou, C. J. Sun, Q. Lu, I. Waluyo, A. Hunt, H. Tanaka, A. N. Hattori, S. Gamage, Y/ Abate, V. G. Pol, H. Zhou, S. K. R. S. Sankaranarayanan, B. Yildiz, K. M. Rabe, and S. Ramanathan, Proceedings of the National Academy of Sciences of the USA, 115, 9672 (2018)
    • Proton-doped strongly correlated perovskite nickelate memory devices, K. Ramadoss, F. Zuo, Y. Sun, Z. Zhang, J. Lin, U. Bhaskar, S. Shin, M. A. Alam, S. Guha, D. Weinstein and S. Ramanathan, arXiv:1805.00527, IEEE Electron Device Letters 39, 1500 (2018)
    • Electrically-Driven Insulator-Metal Transition Based Devices, Part II: Transient Characteristics, J. Lin, S. Ramanathan and S. Guha, IEEE Transactions on Electron Devices 65, 3989 (2018)
    • Electrically-Driven Insulator-Metal Transition Based Devices, Part I: Electrothermal model and experimental analysis for DC Experimental Characteristics, J. Lin, S. Ramanathan and S. Guha, IEEE Transactions on Electron Devices 65, 3982 (2018)
    • Quantum materials for brain sciences and artificial intelligence, S. Ramanathan, MRS Bulletin, 43, 534 (2018)
    • Thermally tunable VO2-SiO2 nanocomposite thin-film capacitors, Y. Sun, K.V.L.V. Narayanachari, C. Wan, X. Sun, H. Wang, K. A. Cooley, S. E. Mohney, D. White, A. Duwel, M. A. Kats and S. Ramanathan, Journal of Applied Physics, 123, 114103 (2018)
    • A self-consistent, semi-classical electro-thermal modeling framework for Mott devices, K. Karda, C. Mouli, S. Ramanathan and M. A. Alam, IEEE Transactions on Electron Devices 65, 1672 (2018)
    • Limiting optical diodes enabled by the phase transition of vanadium dioxide, C. Wan, E. Horak, J. King, J. Salman, Z. Zhang, Y. Zhou, P. Roney, B. Gundlach, S. Ramanathan, R. Goldsmith and M. A. Kats, ACS Photonics, 5, 2688 (2018)
    • Radiative thermal runaway due to negative differential thermal emission across a solid-solid phase transition, D. M. Bierman, A. Lenert, M. A. Kats, Y. Zhou, S. Zhang, M. Ossa, S. Ramanathan, F. Capasso and E. N. Wang, Physical Review Applied 10, 021001 (2018) Editor’s Suggestion
  • Perovskite nickelates as electric-field sensors in salt water, Z. Zhang, D. Schwanz, B. Narayanan, M. Kotiuga, J. A. Dura, M. Cherukara, H. Zhou, J. W. Freeland, J. Li, R. Sutarto, F. He, C. Wu, J. Zhu, Y. Sun, K. Ramadoss, S. Nonnenmann, N. Yu, R. Comin, K. M. Rabe, S. K. R. S. Sankaranarayanan and S. Ramanathan, Nature, 553, 68 (2018)
    • 2017
    • Functional materials at the flick of a switch, S. Ramanathan, Nature, 546, 40 (2017)
    • Epsilon-near-zero substrate engineering for ultrathin-film perfect absorbers, J. Rensberg Y. Zhou, S. Richter, C. Wan, S. Zhang, P. Schoppe, R. Schmidt-Grund, S. Ramanathan, F. Capasso, M. A. Kats and C. Ronning, Physical Review Applied, 8, 014009 (2017)
    • Habituation based synaptic plasticity and organismic learning in a quantum perovskite, F. Zuo, P. Panda, M. Kotiuga, J. Li, M. Kang, C. Mazzoli, H. Zhou, A. Barbour, S. Wilkins, B. Narayanan, M. Cherukara, Z. Zhang, S. K. R. S. Sankaranarayanan, R. Comin, K. M. Rabe, K. Roy and S. Ramanathan, Nature Communications, 8, 240 (2017)
    • Flash transition as a possible origin for low open circuit voltage in thin film solid oxide fuel cells, R. Raj and S. Ramanathan, Journal of Power Sources, 359, 48 (2017)
    • Preface: Ionotronics, D. D. Fong and S. Ramanathan, APL Materials, 5, 042201 (2017)
  • Evolution of metallicity in vanadium dioxide by creation of oxygen vacancies, Z. Zhang, F. Zuo, C. Wan, A. Dutta, J. Kim, J. Rensberg, R. Nawrodt, H. H. Park, T. Larrabee, X. Guan, Y. Zhou, S. M. Prokes, C. Ronning, V. M. Shalaev, A. Boltasseva, M. A. Kats, and S. Ramanathan, Physical Review Applied, 7, 034008 (2017)
    • 2016
    • Using atom probe tomography to understand ZnO:Al/SiO2/Si Schottky diodes, R. Jaramillo, A. Youseff, A. Akey, F. Schoofs. S. Ramanathan and T. Buonassisi, Physical Review Applied, 6, 034016 (2016)
    • Chemical and radiation stability of ionic liquids: A computational screening study, N. Ilawe, S. Ramanathan, B. M. Wong and J. Wu, Journal of Physical Chemistry C, 120, 27757 (2016)
    • Sign reversal of magnetoresistance in a perovskite nickelate by electron doping, K. Ramadoss, N. Mandal, X. Dai, Z. Wan, Y. Zhou, L. Rokhinson, Y. P. Chen, J. Hu, and S. Ramanathan, Physical Review B, 94, 235124 (2016)
    • Correlated perovskites as a new platform for super broadband tunable photonics, Z. Li, Y. Zhou, H. Qi, Q. Pan, Z. Zhang, N. N. Shi, M. Lu, A. Stein, C. Y. Li, S. Ramanathan and N. Yu, Advanced Materials, 28, 9117 (2016)
    • Experimental investigation into tungsten carbide thin films as solid oxide fuel cell anodes, J. Jiang, X. Guan, J. Lattimer, C. M. Friend, A. Verma, M. Tsuchiya and S. Ramanathan, Journal of Materials Research, 31, 3050 (2016)
    • Hydride-based solid oxide fuel cell-battery hybrid electrochemical system, X. Guan, J. Jiang, J. Lattimer, M. Tsuchiya, C. M. Friend and S. Ramanathan, Energy Technology, 5, 616 (2017)
    • Strongly correlated perovskite fuel cells, Y. Zhou, X. Guan, H. Zhou, K. Ramadoss, S. Adam, H. Liu, S. Lee, J. Shi, M. Tsuchiya, D. D. Fong and S. Ramanathan, Nature, 231, 534 (2016)
    • Thin film oxy-apatite anodes for solid oxide fuel cells, S. Lee, X. Guan and S. Ramanathan, Journal of the Electrochemical Society, 163, F719 (2016)
  • Active Optical Metasurfaces Based on Defect-Engineered Phase-Transition Materials, J. Rensberg, S. Zhang, Y. Zhou, A. S. McLeod, C. Schwarz, M. Goldflam, M. Liu, J. Kerbusch, R. Nawrodt, S. Ramanathan, D. N. Basov, F. Capasso, C. Ronning and M. A. Kats, Nano Letters, 16, 1050 (2016)
    • 2015
    • Dynamic control of light emission faster than the lifetime limit using VO2 phase-change, S. Cueff, D. Li, Y. Zhou, F. J. Wong, J. A. Kurvits, S. Ramanathan and R. Zia, Nature Communications, 6, 8636 (2015)
    • Mott memory and neuromorphic devices, Y. Zhou and S. Ramanathan, Proceedings of the IEEE, 103, 1289 (2015)
    • Phase change materials for photonics, Z. Yang and S. Ramanathan, IEEE Photonics Journal, 7, 0700305 (2015)
    • Control of emergent properties at a correlated oxide interface with graphene, Y. Zhou, J. Park, J. Shi, M. Chhowalla, H. Park, D. A. Weitz and S. Ramanathan, Nano Letters, 15, 1627 (2015)
    • Reconfigurable anisotropy and functional transformations with VO2-based metamaterial electric circuits, S. Savo, Y. Zhou, G. Castaldi, M. Moccia, V. Galdi, S. Ramanathan and Y. Sato, Physical Review B, 91, 134105 (2015)
  • Strong correlations between structural order and passive state at water-oxide interfaces, B. Narayanan, S. A. Deshmukh, S. K. R. S. Sankaranarayanan and S. Ramanathan, Electrochimica Acta, 179, 386 (2015)
    • 2014
    • Neuromimetic circuits with synaptic devices based on strongly correlated electron systems, S. D. Ha, J. Shi, Y. Meroz, L. Mahadevan and S. Ramanathan, Physical Review Applied, 2, 064003 (2014); Editor’s Suggestion, Physics Synopsis [link]
    • Thin film fuel cells with vanadium oxide anodes: strain and stoichiometry effects, Q. Van Overmeere and S. Ramanathan, Electrochimica Acta, 150, 83 (2014)
    • Orbital splitting and optical conductivity of the insulating phase of NbO2, F. J. Wong, N. Hong and S. Ramanathan, Physical Review B, 90, 115135 (2014)
    • Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping, J. Shi, Y. Zhou and S. Ramanathan, Nature Communications, 5, 4860 (2014)
    • Current-modulated optical properties of vanadium dioxide thin films in the phase transition region, S. Zhang, M. A. Kats, Y. Cui, Y. Zhou, Y. Yao, S. Ramanathan and F. Capasso, Applied Physics Letters, 105, 211104 (2014)
    • Strongly correlated electronic phase transition systems for cutting-edge microwave devices, S. D. Ha, Y. Zhou, A. E. Duwel, D. W. White and S. Ramanathan, IEEE Microwave Magazine, Sep-Oct, p. 32 (2014)
    • Origins of bad metal conductivity and insulator-metal transition in the rare-earth nickelates, R. Jaramillo, S. D. Ha, D. M. Silevitch and S. Ramanathan, Nature Physics, 10, 304 (2014)
    • Ultra-thin freestanding ceria membranes: layer transfer techniques and high temperature conductivity studies, J. S. Sim, J. Shi and S. Ramanathan, Journal of Materials Chemistry A, 2, 19019 (2014)
    • Conductivity noise study of the kinetics of the insulator-metal transition and phase co-existence in epitaxial samarium nickelate thin films, A. Sahoo, S. D. Ha, S. Ramanathan and A. Ghosh, Physical Review B, 90, 085116 (2014)
    • Abrupt insertion loss drop by RF-triggering of the phase transition in VO2 CPW switches, S. D. Ha, Y. Zhou, C. J. Fisher, S. Ramanathan and J. Treadway, IEEE Microwave and Wireless Components Letters, 24, 575 (2014)
    • Nonisostructural complex oxide heteroepitaxy, F. J. Wong and S. Ramanathan, Journal of Vacuum Science and Technology A, 32, 040801 (2014); critical review
    • Performance of solid oxide fuel cells approaching the two-dimensional limit, K. Kerman and S. Ramanathan, Journal of Applied Physics, 115, 174307 (2014)
    • Tunable hyperbolic metamaterials utilizing phase change heterostructures, H. N. S. Krishnamoorthy, Y. Zhou, S. Ramanathan, E. E. Narimanov and V. M. Menon, Applied Physics Letters, 104, 121101 (2014)
  • Professor Arthur Nowick Special Issue: Free standing yttria-doped zirconia membranes: Geomretical effects on stability, K. Kerman, S. Xuza and S. Ramanathan, Journal of Electroceramics, in press (2014)
    • 2013
    • A correlated nickelate synaptic transistor, J. Shi, S. D. Ha, Y. Zhou, F. Schoofs and S. Ramanathan, Nature Communications, 4, 2676 (2013)
    • Monolithic integration of nanoscale solid oxide fuel cell membranes onto polymeric scaffolds through stress control, K. Kerman, Q. Van Overmeere, M. Karpelson, R. J. Wood and S. Ramanathan, ACS Nano, 7, 10895 (2013)
    • Correlated electron materials and field effect transistors for logic: A review, Y. Zhou and S. Ramanathan, Critical Reviews in Solid State and Materials Sciences, 38, 286 (2013)
    • Vanadium dioxide as a natural disordered metamaterial: Perfect thermal emission and large broadband negative differential thermal emittance, M. A. Kats, R. Blanchard, S. Zhang, P. Genevet, C. Ko, S. Ramanathan and F. Capasso, Physical Review X, 3, 041004 (2013)
    • Space charge polarization induced memory in SmNiO3 / Si transistors, S. H. Lee, M. Kim, S. D. Ha, J. W. Lee, S. Ramanathan and S. Tiwari, Applied Physics Letters, 102, 072102 (2013)
  • Chloride ions induce order-disorder transition at water-oxide interfaces, S. Deshmukh, G. Kamath, S. Ramanathan and S.K.R.S. Sankaranarayanan, Physical Review E, 88, 062119 (2013)
    • 2012
    • Ultra-thin perfect absorber employing a tunable phase change material, M. Kats, D. Sharma, J. Lin, P. Genevet, R. Blanchard, Z. Yang, M. M. Qazilbash, D. N. Basov, S. Ramanathan and F. Capasso, Applied Physics Letters, 101, 221101 (2012)
    • Orientation dependent oxygen exchange kinetics on single crystal SrTiO3 surfaces, K. Kerman, C. Ko and S. Ramanathan, Physical Chemistry Chemical Physics, 14, 11953 (2012)
    • Energy storage in ultra-thin solid oxide fuel cells, Q. van Overmeere, K. Kerman and S. Ramanathan, Nano Letters, 12, 3756 (2012)
  • Nanoscale compositionally graded thin-film electrolyte membranes for low temperature solid oxide fuel cells, K. Kerman, B. K. Lai and S. Ramanathan, Advanced Energy Materials, 2, 656 (2012)
    • 2011
    • Electronic granularity and the work function of transparent conducting ZnO:Al thin films, R. Jaramillo and S. Ramanathan, Advanced Functional Materials, 21, 4068 (2011)
    • Adaptive oxide electronics: A review, S. D. Ha and S. Ramanathan, Applied Physics Reviews-Journal of Applied Physics , 110, 071101 (2011)
    • High current density monolayer CdSe/ZnS quantum dot light emiting devices with oxide electrodes, E. Likovich, R. Jaramillo, K. J. Russell, E. Hu, S. Ramanathan and V. Narayanamurti, Advanced Materials, 23, 4521 (2011)
    • Oxide electronics utilizing ultrafast metal-insulator transitions, Z. Yang, C. Ko and S. Ramanathan, Annual Reviews of Materials Research, 41, 337 (2011)
  • Scalable nanostructured membranes for solid oxide fuel cells, M. Tsuchiya, B.K. Lai and S. Ramanathan, Nature Nanotechnology, 6, 282 (2011)
    • 2010
    • Thermal conductivity and dynamic heat capacity across the metal-insulator transition in thin film VO2, D. Oh, C. Ko, S. Ramanathan and D.G. Cahill, Applied Physics Letters, 96, 151906, 2010
  • Limits on vanadium oxide Mott metal-insulator transition field effect transistors, S. Hormoz and S. Ramanathan, Solid State Electronics, 54, 654, 2010
    • 2009
    • Photon-assisted oxidation and oxide synthesis: A review, M. Tsuchiya, K.R.S.S. Sankaranarayanan and S. Ramanathan, Progress in Materials Science, 54, 981 (2009)
    • Atomistic simulations of field enhanced oxidation of Al (100) beyond the Mott potential, S. K.R. S. Sankaranarayanan, E. Kaxiras and S. Ramanathan, Physical Review Letters, 102, 095504 (2009)
    • Carrier density and magneto-resistance measurements on vanadium oxide thin films across the phase transition boundary, D. Ruzmetov, D. Heiman, B. Claflin, V. Narayanamurti and S. Ramanathan, Physical Review B, 75, 153107 (2009)
  • An experimental investigation into micro-fabricated fuel cells utilizing ultra-thin LaSrCoFeO3 cathodes and yttria-doped zirconia electrolyte films, A.C. Johnson, B.K. Lai, H. Xiong and S. Ramanathan, Journal of Power Sources, 186, 252 (2009)
    • 2008
    • An investigation into photon irradiation induced structural and interfacial phenomena in pure and alio-valently doped zirconia thin films, M. Tsuchiya and S. Ramanathan, Philosophical Magazine, 88, 2519 (2008)
    2007
    • X-ray absorption spectroscopy studies of vanadium oxide thin films across the phase transition boundary, D. Ruzmetov, S. Senanayake and S. Ramanathan, Physical Review B, 75, 195102 (2007)
    2006
    • Three-dimensional wafer stacking via Cu-Cu bonding integrated with 65 nm strained Si/low-k CMOS tchnology, P. Morrow, C. M. Park, S. Ramanathan, M. Kobrinsky and M. Harmes, IEEE Electron Device Letters, 27, 335 (2006)
    2004
    • Charge-trapping studies in ZrO2 and HfO2 gate dielectrics grown by ultra-violet ozone oxidation, S. Ramanathan, P.C. McIntyre, S. Guha and E.P. Gusev, Applied Physics Letters, 84, 389 (2004)
    2003
    • Phase separation in hafnium silicates for alternative gate dielectrics, S. Ramanathan, P. C. McIntyre, J. Luning, P.S. Lysaght, Y. Yang, Z. Chen and S. Stemmer, Journal of Electrochemical Society, 150, F173 (2003)
    2002
    • Germanium MOS capacitors incorporating ultra-thin high-k dielectric, C.O. Chui, S. Ramanathan, B. Triplett, P.C. McIntyre and K.C. Saraswat, IEEE Electron Device Letters, 23, 473 (2002).
    2001
    • Microstructural study of epitaxial Pt films and permalloy / Pt films on (0001) Sapphire, S. Ramanathan, B.M. Clemens, P.C. McIntyre and U. Dahmen, Philosophical Magazine A, 81, 2073-2094 (2001).