Spatial interactions in hydrogenated perovskite nickelate synaptic networks, R. S. Bisht, J. Park, H. Yu, C. Wu, N. Tilak, S. Rangan, T. J. Park, Y. Yuan, S. Das, U. Goteti, H. T. Yi, H. Hijazi, A. Al-Mahboob, J. Sadowski, H. Zhou, S. Oh, E. Y. Andrei, M. T. Allen, D. Kuzum, A. Frano, R. C. Dynes, S. Ramanathan, Nano Letters, 23, 7166 (2023)

Selective area doping for Mott neuromorphic electronics, S. Deng, H. Yu, T. J. Park, A. N. M. Islam, S. Manna, A. Pofelski, Q. Wang, Y. Zhu, S. K. R. S. Sankaranarayanan, A. Sengupta and S. Ramanathan, Science Advances, 9, eade4838 (2023)

Hydrogenated VO2 bits for probabilistic computing, S. Deng, T. J. Park, H. Yu, A. Saha, A. N. M. N. Islam, Q. Wang, A. Sengupta and S. Ramanathan, IEEE Electron Device Letters (in press, 2023)

Monolithic integration and ferroelectric phase evolution of hafnium zirconium oxide in 2D neuromorphic synaptic devices, W. Sarney, A. L. Glasmann, J. S. Pearson, C. K. McGinn, P. M. Litwin, R. S. Bisht, S. Ramanathan, S. J. McDonnell, C. A. Hacker, and S. Najmaei, Materials Today Nano, 24, 100378 (2023)

Electrically-driven insulator-metal transition in vanadium dioxide for neuromorphic computing, Haoming Yu, Purdue University, 2023

Electrically tunable VO2-metal metasurface for mid-infrared switching, limiting, and nonlinear isolation, J. King, C. Wan, T. J. Park, S. Deshpande, Z. Zhang, S. Ramanathan and M. A. Kats, arXiv:2303.09060 (2023)

Transient memory and learning in correlated oxide neuromorphic devices, S. Mondal, R. S. Bisht, C. Zhang and S. Ramanathan, IEEE International Conference on Emerging Electronics, Proceedings (2022)

Efficient probabilistic computing with stochastic perovskite nickelates, T. J. Park, K. Selcuk, H. T. Zhang, S. Manna, R. Batra, Q. Wang, H. Yu, S.K.R.S. Sankaranarayanan, H. Zhou, K. Y. Camsari and S. Ramanathan, Nano Letters, 22, 8654 (2022)

All-electric nonassociative learning in NiO, S. Mondal, Z. Zhang, A.N.M. Nafiul Islam, R. Andrawis, S. Gamage, N. A. Aghamiri, Q. Wang, H. Zhou, F. Rodolakis, R. Tran, J. Kaur, C. Chen, S. P. Ong, A. Sengupta, Y. Abate, K. Roy and S. Ramanathan, Advanced Intelligent Systems, 4, 2200069 (2022)

Negative differential resistance in oxygen-ion conductor yttria-stabilized zirconia for extreme environment electronics, Y. Yuan, H. Yu, A. Podpirka, P. Ostdiek, R. Srinivasan and S. Ramanathan, ACS Applied Materials and Interfaces, 14, 40116 (2022)