Electrically tunable VO2-metal metasurface for mid-infrared switching, limiting, and nonlinear isolation, J. King, C. Wan, T. J. Park, S. Deshpande, Z. Zhang, S. Ramanathan and M. A. Kats, Nature Photonics, 18, 74 (2024)

Sub-nanometer scale mapping of hydrogen doping in vanadium dioxide, A. Pofelski, H. Jia, S. Deng, H. Yu, T. J. Park, S. Manna, M. K. Y. Chan, S.K.R.S. Sankaranarayanan, S. Ramanathan and Y. Zhu, Nano Letters, 24, 1974 (2024)

Infrared nanoimaging of hydrogenated perovskite nickelate synaptic devices, S. Gamage, S. Manna, M. Zajac, S. Hancock, Q. Wang, S. Singh, M. Ghafariasl, K. Yao, T. Tiwald, T. J. Park, D. P. Landau, H. Wen, S.K.R.S. Sankaranarayanan, P. Darancet, S. Ramanathan and Y. Abate, ACS Nano, 18, 2105 (2024)

Temporal credit assignment for one-shot learning utilizing a phase transition material, A. Galloni, Y. Yuan, M. Zhu, H. Yu, R. S. Bisht, C. T. S. Wu, C. Grienberger, S. Ramanathan and A. Milstein, arXiv:2310.00066 (2023)

Spatial interactions in hydrogenated perovskite nickelate synaptic networks, R. S. Bisht, J. Park, H. Yu, C. Wu, N. Tilak, S. Rangan, T. J. Park, Y. Yuan, S. Das, U. Goteti, H. T. Yi, H. Hijazi, A. Al-Mahboob, J. Sadowski, H. Zhou, S. Oh, E. Y. Andrei, M. T. Allen, D. Kuzum, A. Frano, R. C. Dynes, S. Ramanathan, Nano Letters, 23, 7166 (2023)

Selective area doping for Mott neuromorphic electronics, S. Deng, H. Yu, T. J. Park, A. N. M. Islam, S. Manna, A. Pofelski, Q. Wang, Y. Zhu, S. K. R. S. Sankaranarayanan, A. Sengupta and S. Ramanathan, Science Advances, 9, eade4838 (2023)

Hydrogenated VO2 bits for probabilistic computing, S. Deng, T. J. Park, H. Yu, A. Saha, A. N. M. N. Islam, Q. Wang, A. Sengupta and S. Ramanathan, IEEE Electron Device Letters (44, 1776, 2023)

Monolithic integration and ferroelectric phase evolution of hafnium zirconium oxide in 2D neuromorphic synaptic devices, W. Sarney, A. L. Glasmann, J. S. Pearson, C. K. McGinn, P. M. Litwin, R. S. Bisht, S. Ramanathan, S. J. McDonnell, C. A. Hacker, and S. Najmaei, Materials Today Nano, 24, 100378 (2023)

Electrically-driven insulator-metal transition in vanadium dioxide for neuromorphic computing, Haoming Yu, Purdue University, 2023

Transient memory and learning in correlated oxide neuromorphic devices, S. Mondal, R. S. Bisht, C. Zhang and S. Ramanathan, IEEE International Conference on Emerging Electronics, Proceedings (2022)