Dynamics of voltage-driven oscillating insulator-metal transitions, Y. Shi, A. E. Duwel, D. M. Callahan, Y. Sun, F. A. Hong, H. Padmanabhan, V. Gopalan, R. Engel-Herbert, S. Ramanathan and L-Q. Chen, Physical Review B (in press, 2021)

Sudden collapse of magnetic order in oxygen deficient nickelate films, J. Li, R. J. Green, Z. Zhang, R. Sutarto, J. T. Sadowski, Z. Zhu, G. Zhang, D. Zhou, Y. Sun, F. He, S. Ramanathan and R. Comin, Physical Review Letters, 126, 187602 (2021)

Universal phase dynamics in VO2 switches revealed by ultrafast operando diffraction, A. Sood, X. Shen, Y. Shi, S. Kumar, S. J. Park, M. Zajac, Y. Sun, L. Q. Chen, S. Ramanathan, X. Wang, W. C. Chueh and A. M. Lindenberg, Science, 373, 352 (2021)

Cation and anion topotactic transformations in cobaltite thin films leading to Ruddlesden-Popper phases, I. T. Chiu, M. H. Lee, S. Cheng, S. Zhang, L. Heki, Z. Zhang, Y. Mohtashami, P. N. Lapa, M. Feng, P. Shafer, A. T. N’Diaye, A. Mehta, J. A. Schuller, G. Galli, S. Ramanathan, Y. Zhu, I. K. Schuller and Y. Takamura, Physical Review Materials 5, 064416 (2021); Editor’s Suggestion

Ultrathin broadband reflective optical limiter, C. Wan, Z. Zhang, J. Salman, J. King, Y. Xiao, Z. Yu, A. Shahsafi, R. Wambold, S. Ramanathan and M. A. Kats, Laser and Photonics Reviews, in press (https://doi.org/10.1002/lpor.202100001, 2021)

Effective reduction of PdCoO2 thin films via hydrogenation and sign tunable anomalous Hall effect, G. Rimal, C. Schmidt, H. Hijazi, L. C. Feldman, Y. Liu, E. Skoropota, J. Lapano, M. Brahlek, D. Mukherjee, R. R. Unocic, M. F. Chisholm, Y. Sun, H. Yu, S. Ramanathan, C. J. Sun, H. Zhou and S. Oh, Physical Review Materials 5, L052001 (2021)

Perovskite nickelate actuators, C. Huang, J. Anderson, S. Paena, X. Chen, S. Ramanathan and D. Weinstein, IEEE Journal of Microelectromechanical Systems, 30, 488 (2021)

A. Tripathi, J. John, S. Kruk, Z. Zhang, H. Nguyen, L. Berguiga, P. R. Romeo, R. Orobtchouk, S. Ramanathan, Y. Kivshar and S. Cueff, Tunable Mie-resonant dielectric metasurfaces based on VO2 phase-transition materials, ACS Photonics, 8, 1206 (2021)

First experimental demonstration of robust HZO/Ga2O3 ferroelectric field-effect transistors as synaptic devices for artificial intelligence applications, J. Noh, H. Bae, J. Li, Y. Luo, Y. Qu, T. J. Park, M. Si, X. Chen, A. R. Charnas, W. Chung, X. Peng, S. Ramanathan, S. Yu and P. D. Ye, IEEE Transactions on Electron Devices, 68, 2515 (2021)