Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams, H. Mei, A. Koch, C. Wan, J. Rensberg, Z. Zhang, J. Salman, M. Hafermann, Y. Xiao, R. Wambold, S. Ramanathan, C. Ronning and M. A. Kats (arXiv:2202.01777)

Wavelength-by-wavelength temperature independent thermal radiation utilizing an insulator-metal transition, J. King, A. Shahsafi, Z. Zhang, C. Wan, Y. Xiao, C. Huang, Y. Sun, P. J. Roney, S. Ramanathan and M. A. Kats (2022), arXiv:2204.00494

Tunable optical anisotropy in epitaxial phase-change VO2 thin films, J. John, A. Slassi, J. Sun, Y. Sun, R. Bachelet, J. Penuelas, G. Saint-Girons, R. Orobtchouk, S. Ramanathan, A. Calzolari and S. Cueff, Nanophotonics (to appear, 2022)

Switching dynamics in vanadium di-oxide based stochastic thermal neurons, H. Yu, A. N. M. Islam, S. Mondal, A. Sengupta and S. Ramanathan, IEEE Transactions on Electron Devices (in press, 2022)

Reconfigurable hyperbolic polaritonics with correlated oxide metasurfaces, N. A. Aghamiri, G. Hu, A. Fali, Z. Zhang, J. Li, S. Balendhran, S. Walia, S. Sriram, J. Edgar, S. Ramanathan, A. Alu and Y. Abate, (2021, arxiv)

Electron doping induced metal-insulator transition in LaNiO3 and memory devices, Q. Wang, H. Zhou and S. Ramanathan, ACS Applied Electronic Materials (2022, in press)

Determining the oxygen stoichiometry of cobaltite thin films, S. Zhang, I. T. Chiu, M. H. Lee, B. Gunn, M. Feng, T. J. Park, P. Shafer, N. A. Padraic, F. Rodolakis, S. Ramanathan, A. Frano, I. Schuller, Y. Takamura and G. Galli, Chemistry of Materials 34, 2076 (2022)

Reconfigurable perovskite nickelate electronics for artificial intelligence, H. T. Zhang, T. J. Park, A.N.M.N. Islam, D. S. J. Tran, S. Manna, Q. Wang, S. Mondal, H. Yu, S. Banik, S. Cheng, H. Zhou, S. Gamage, S. Mahapatra, Y. Zhu, Y. Abate, N. Jiang, S.K.R.S. Sankaranarayanan, A. Sengupta, C. Teuscher and S. Ramanathan, Science, 375, 533 (2022),

Carrier doping physics of rare earth perovskite nickelates, J. Li, S. Ramanathan and R. Comin, Frontiers in Physics 1, Art. 834882 (2022)

First demonstration of robust tri-gate b-Ga2O3 nano-membrane field effect transistors, H. Bae, T. J. Park, J. Noh, W. Chung, M. Si, S. Ramanathan and P. D. Ye, Nanotechnology 33, 125201 (2022)