Efficient probabilistic computing with stochastic perovskite nickelates, T. J. Park, K. Selcuk, H. T. Zhang, S. Manna, R. Batra, Q. Wang, H. Yu, S.K.R.S. Sankaranarayanan, H. Zhou, K. Y. Camsari and S. Ramanathan, Nano Letters, 22, 8654 (2022)

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All-electric nonassociative learning in NiO, S. Mondal, Z. Zhang, A.N.M. Nafiul Islam, R. Andrawis, S. Gamage, N. A. Aghamiri, Q. Wang, H. Zhou, F. Rodolakis, R. Tran, J. Kaur, C. Chen, S. P. Ong, A. Sengupta, Y. Abate, K. Roy and S. Ramanathan, Advanced Intelligent Systems, 4, 2200069 (2022)

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Negative differential resistance in oxygen-ion conductor yttria-stabilized zirconia for extreme environment electronics, Y. Yuan, H. Yu, A. Podpirka, P. Ostdiek, R. Srinivasan and S. Ramanathan, ACS Applied Materials and Interfaces, 14, 40116 (2022)

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Wavelength-by-wavelength temperature independent thermal radiation utilizing an insulator-metal transition, J. King, A. Shahsafi, Z. Zhang, C. Wan, Y. Xiao, C. Huang, Y. Sun, P. J. Roney, S. Ramanathan and M. A. Kats, ACS Photonics 9, 2742 (2022)

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Complex oxides for brain-inspired computing: A review, T. J. Park, S. Deng, S. Manna, A. N. M. Nafiul Islam, H. Yu, Y. Yuan, D. D. Fong, A. A. Chubykin, A. Sengupta, S. K. R. S. Sankaranarayanan and S. Ramanathan, Advanced Materials, 2203352 (2022)

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Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams, H. Mei, A. Koch, C. Wan, J. Rensberg, Z. Zhang, J. Salman, M. Hafermann, Y. Xiao, R. Wambold, S. Ramanathan, C. Ronning and M. A. Kats Nanophotonics, 11, 3923 (2022)

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Tunable optical anisotropy in epitaxial phase-change VO2 thin films, J. John, A. Slassi, J. Sun, Y. Sun, R. Bachelet, J. Penuelas, G. Saint-Girons, R. Orobtchouk, S. Ramanathan, A. Calzolari and S. Cueff, Nanophotonics 11, 3913 (2022)

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Switching dynamics in vanadium di-oxide based stochastic thermal neurons, H. Yu, A. N. M. Islam, S. Mondal, A. Sengupta and S. Ramanathan, IEEE Transactions on Electron Devices 69, 3135 (2022)

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Reconfigurable hyperbolic polaritonics with correlated oxide metasurfaces, N. A. Aghamiri, G. Hu, A. Fali, Z. Zhang, J. Li, S. Balendhran, S. Walia, S. Sriram, J. Edgar, S. Ramanathan, A. Alu and Y. Abate, Nature Communications 13, 4511 (2022)

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Electron doping induced metal-insulator transition in LaNiO3 and memory devices, Q. Wang, H. Zhou and S. Ramanathan, ACS Applied Electronic Materials, 4, 2463 (2022)

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