Sub-nanometer scale mapping of hydrogen doping in vanadium dioxide, A. Pofelski, H. Jia, S. Deng, H. Yu, T. J. Park, S. Manna, M. K. Y. Chan, S.K.R.S. Sankaranarayanan, S. Ramanathan and Y. Zhu, Nano Letters, 24, 1974 (2024)

Infrared nanoimaging of hydrogenated perovskite nickelate synaptic devices, S. Gamage, S. Manna, M. Zajac, S. Hancock, Q. Wang, S. Singh, M. Ghafariasl, K. Yao, T. Tiwald, T. J. Park, D. P. Landau, H. Wen, S.K.R.S. Sankaranarayanan, P. Darancet, S. Ramanathan and Y. Abate, ACS Nano, 18, 2105 (2024)

Temporal credit assignment for one-shot learning utilizing a phase transition material, A. Galloni, Y. Yuan, M. Zhu, H. Yu, R. S. Bisht, C. T. S. Wu, C. Grienberger, S. Ramanathan and A. Milstein, arXiv:2310.00066 (2023)

Spatial interactions in hydrogenated perovskite nickelate synaptic networks, R. S. Bisht, J. Park, H. Yu, C. Wu, N. Tilak, S. Rangan, T. J. Park, Y. Yuan, S. Das, U. Goteti, H. T. Yi, H. Hijazi, A. Al-Mahboob, J. Sadowski, H. Zhou, S. Oh, E. Y. Andrei, M. T. Allen, D. Kuzum, A. Frano, R. C. Dynes, S. Ramanathan, Nano Letters, 23, 7166 (2023)

Selective area doping for Mott neuromorphic electronics, S. Deng, H. Yu, T. J. Park, A. N. M. Islam, S. Manna, A. Pofelski, Q. Wang, Y. Zhu, S. K. R. S. Sankaranarayanan, A. Sengupta and S. Ramanathan, Science Advances, 9, eade4838 (2023)

Hydrogenated VO2 bits for probabilistic computing, S. Deng, T. J. Park, H. Yu, A. Saha, A. N. M. N. Islam, Q. Wang, A. Sengupta and S. Ramanathan, IEEE Electron Device Letters (44, 1776, 2023)

Monolithic integration and ferroelectric phase evolution of hafnium zirconium oxide in 2D neuromorphic synaptic devices, W. Sarney, A. L. Glasmann, J. S. Pearson, C. K. McGinn, P. M. Litwin, R. S. Bisht, S. Ramanathan, S. J. McDonnell, C. A. Hacker, and S. Najmaei, Materials Today Nano, 24, 100378 (2023)

Efficient probabilistic computing with stochastic perovskite nickelates, T. J. Park, K. Selcuk, H. T. Zhang, S. Manna, R. Batra, Q. Wang, H. Yu, S.K.R.S. Sankaranarayanan, H. Zhou, K. Y. Camsari and S. Ramanathan, Nano Letters, 22, 8654 (2022)

All-electric nonassociative learning in NiO, S. Mondal, Z. Zhang, A.N.M. Nafiul Islam, R. Andrawis, S. Gamage, N. A. Aghamiri, Q. Wang, H. Zhou, F. Rodolakis, R. Tran, J. Kaur, C. Chen, S. P. Ong, A. Sengupta, Y. Abate, K. Roy and S. Ramanathan, Advanced Intelligent Systems, 4, 2200069 (2022)

Negative differential resistance in oxygen-ion conductor yttria-stabilized zirconia for extreme environment electronics, Y. Yuan, H. Yu, A. Podpirka, P. Ostdiek, R. Srinivasan and S. Ramanathan, ACS Applied Materials and Interfaces, 14, 40116 (2022)