Electron doping induced metal-insulator transition in LaNiO3 and memory devices, Q. Wang, H. Zhou and S. Ramanathan, ACS Applied Electronic Materials, 4, 2463 (2022)
https://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.png00Shriram Ramanathanhttps://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.pngShriram Ramanathan2022-05-05 14:55:412025-08-21 17:23:24Electron doping induced metal-insulator transition in LaNiO3 and memory devices, Q. Wang, H. Zhou and S. Ramanathan, ACS Applied Electronic Materials, 4, 2463 (2022)
