Electron doping induced metal-insulator transition in LaNiO3 and memory devices, Q. Wang, H. Zhou and S. Ramanathan, ACS Applied Electronic Materials, 4, 2463 (2022)
https://shriram-ramanathan.org/wp-content/uploads/2022/09/Rutgers_1-300x105.jpg00Shriram Ramanathanhttps://shriram-ramanathan.org/wp-content/uploads/2022/09/Rutgers_1-300x105.jpgShriram Ramanathan2022-05-05 14:55:412022-05-27 11:45:16Electron doping induced metal-insulator transition in LaNiO3 and memory devices, Q. Wang, H. Zhou and S. Ramanathan, ACS Applied Electronic Materials, 4, 2463 (2022)
