First demonstration of robust tri-gate b-Ga2O3 nano-membrane field effect transistors, H. Bae, T. J. Park, J. Noh, W. Chung, M. Si, S. Ramanathan and P. D. Ye, Nanotechnology 33, 125201 (2022)
https://shriram-ramanathan.org/wp-content/uploads/2022/09/Rutgers_1-300x105.jpg00Shriram Ramanathanhttps://shriram-ramanathan.org/wp-content/uploads/2022/09/Rutgers_1-300x105.jpgShriram Ramanathan2022-01-13 18:08:182022-01-13 18:08:18First demonstration of robust tri-gate b-Ga2O3 nano-membrane field effect transistors, H. Bae, T. J. Park, J. Noh, W. Chung, M. Si, S. Ramanathan and P. D. Ye, Nanotechnology 33, 125201 (2022)
