First experimental demonstration of robust HZO/Ga2O3 ferroelectric field-effect transistors as synaptic devices for artificial intelligence applications, J. Noh, H. Bae, J. Li, Y. Luo, Y. Qu, T. J. Park, M. Si, X. Chen, A. R. Charnas, W. Chung, X. Peng, S. Ramanathan, S. Yu and P. D. Ye, IEEE Transactions on Electron Devices, 68, 2515 (2021)
https://shriram-ramanathan.org/wp-content/uploads/2022/09/Rutgers_1-300x105.jpg00Shriram Ramanathanhttps://shriram-ramanathan.org/wp-content/uploads/2022/09/Rutgers_1-300x105.jpgShriram Ramanathan2021-03-04 12:26:422021-05-03 20:23:28First experimental demonstration of robust HZO/Ga2O3 ferroelectric field-effect transistors as synaptic devices for artificial intelligence applications, J. Noh, H. Bae, J. Li, Y. Luo, Y. Qu, T. J. Park, M. Si, X. Chen, A. R. Charnas, W. Chung, X. Peng, S. Ramanathan, S. Yu and P. D. Ye, IEEE Transactions on Electron Devices, 68, 2515 (2021)
