First experimental demonstration of robust HZO/Ga2O3 ferroelectric field-effect transistors as synaptic devices for artificial intelligence applications, J. Noh, H. Bae, J. Li, Y. Luo, Y. Qu, T. J. Park, M. Si, X. Chen, A. R. Charnas, W. Chung, X. Peng, S. Ramanathan, S. Yu and P. D. Ye, IEEE Transactions on Electron Devices, 68, 2515 (2021)
https://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.png00Shriram Ramanathanhttps://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.pngShriram Ramanathan2021-03-04 12:26:422025-08-21 17:23:26First experimental demonstration of robust HZO/Ga2O3 ferroelectric field-effect transistors as synaptic devices for artificial intelligence applications, J. Noh, H. Bae, J. Li, Y. Luo, Y. Qu, T. J. Park, M. Si, X. Chen, A. R. Charnas, W. Chung, X. Peng, S. Ramanathan, S. Yu and P. D. Ye, IEEE Transactions on Electron Devices, 68, 2515 (2021)
