Low-voltage artificial neuron using feedback engineered insulator-to-metal-transition devices, Lin, J., Sonde, S., Chen, C., Stan, L., Achari, K.V.L.V., Ramanathan, S. and Guha, S., 2016, IEEE International Electron Devices Meeting (IEDM), 34.5.1. – 34.5.4 (2016)October 2016 https://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.png 0 0 Shriram Ramanathan https://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.png Shriram Ramanathan2016-10-28 23:52:342025-08-21 17:23:28Low-voltage artificial neuron using feedback engineered insulator-to-metal-transition devices, Lin, J., Sonde, S., Chen, C., Stan, L., Achari, K.V.L.V., Ramanathan, S. and Guha, S., 2016, IEEE International Electron Devices Meeting (IEDM), 34.5.1. – 34.5.4 (2016)
