2006 – 2010: B.S., Physics, Peking University, China
2010 – present: Ph.D. candidate, Applied Physics, Harvard University
My current research focuses on vanadium dioxide materials and device applications. My previous research experience includes resistive random access memory and terahertz laser.
I am currently studying the properties of metal-insulator transition (MIT) in VO2 and its possible applications in devices.
(1) Investigation of the mechanism of MIT in VO2. The mechanism is still not clear. A structural transition is associated with the MIT and it is difficult to determine how they are related.
(2) Recent studies show that MIT could be triggered by electrical-field in VO2. My research is focused on building FET device utilizing this phenomenon.