Shi and Zhou’s nickelate switch is discussed in ‘Edging towards silicon-free transistors’
Edging towards silicon-free transistors
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Fan Zuo
Post Doctoral Fellow
MRS Fall Meeting
Title: Control of metal-insulator transitions by electrolyte gating
International Society of Electrochemistry Meeting, Lausanne
Title: Point defects at oxide interfaces and passive state breakdown
IEEE Microwave Symposium
Title: The Mott metal-insulator transition transistor
IEEE Photonics
Title: Vanadium dioxide for emerging photonics
Professor Lester Eastman Conference on high Performance Devices
Title: Mott transition electronics
AVS Annual Meeting
Title: Experimental techniques to study point defects at oxide surfaces/interfaces
Physics at the Falls, NY
Title: Gating correlated electron systems
IEEE DRC
Title: A critical examination of the Mott transition transistor
