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admin2013-08-26 08:57:562020-08-01 17:51:10Space charge polarization induced memory in SmNiO3 / Si transistors, S. H. Lee, M. Kim, S. D. Ha, J. W. Lee, S. Ramanathan and S. Tiwari, Applied Physics Letters, 102, 072102 (2013)
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admin2013-08-26 08:57:192020-08-01 17:51:10Chloride ions induce order-disorder transition at water-oxide interfaces, S. Deshmukh, G. Kamath, S. Ramanathan and S.K.R.S. Sankaranarayanan, Physical Review E, 88, 062119 (2013)
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admin2012-08-26 08:56:332020-08-01 17:51:31Ultra-thin perfect absorber employing a tunable phase change material, M. Kats, D. Sharma, J. Lin, P. Genevet, R. Blanchard, Z. Yang, M. M. Qazilbash, D. N. Basov, S. Ramanathan and F. Capasso, Applied Physics Letters, 101, 221101 (2012)
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admin2012-08-26 08:55:502020-08-01 17:51:31Orientation dependent oxygen exchange kinetics on single crystal SrTiO3 surfaces, K. Kerman, C. Ko and S. Ramanathan, Physical Chemistry Chemical Physics, 14, 11953 (2012)
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admin2012-08-26 08:54:502020-08-01 17:51:31Energy storage in ultra-thin solid oxide fuel cells, Q. van Overmeere, K. Kerman and S. Ramanathan, Nano Letters, 12, 3756 (2012)
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admin2012-08-26 08:54:142020-08-01 17:51:31Nanoscale compositionally graded thin-film electrolyte membranes for low temperature solid oxide fuel cells, K. Kerman, B. K. Lai and S. Ramanathan, Advanced Energy Materials, 2, 656 (2012)
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admin2011-08-26 08:53:202020-08-01 17:51:32Electronic granularity and the work function of transparent conducting ZnO:Al thin films, R. Jaramillo and S. Ramanathan, Advanced Functional Materials, 21, 4068 (2011)
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admin2011-08-26 08:52:332020-08-01 17:51:32Adaptive oxide electronics: A review, S. D. Ha and S. Ramanathan, Applied Physics Reviews-Journal of Applied Physics , 110, 071101 (2011)
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admin2011-08-26 08:51:452020-08-01 17:51:32High current density monolayer CdSe/ZnS quantum dot light emiting devices with oxide electrodes, E. Likovich, R. Jaramillo, K. J. Russell, E. Hu, S. Ramanathan and V. Narayanamurti, Advanced Materials, 23, 4521 (2011)
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admin2011-08-26 08:50:202020-08-01 17:51:32Oxide electronics utilizing ultrafast metal-insulator transitions, Z. Yang, C. Ko and S. Ramanathan, Annual Reviews of Materials Research, 41, 337 (2011)
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