https://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.png00Shriram Ramanathanhttps://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.pngShriram Ramanathan2022-02-11 20:00:072025-08-21 17:23:25IEEE Spectrum highlights Zhang et al study
https://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.png00Shriram Ramanathanhttps://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.pngShriram Ramanathan2021-12-01 11:47:142025-08-21 17:23:25Recongurable hyperbolic polaritonics with correlated oxide metasurfaces, N. A. Aghamiri, G. Hu, A. Fali, Z. Zhang, J. Li, S. Balendhran, S. Walia, S. Sriram, J. Edgar, S. Ramanathan, A. Alu and Y. Abate (arxiv, 2021)
https://shriram-ramanathan.org/wp-content/uploads/2023/09/Hojun_Son_-_Photo-scaled.jpg20481536adminhttps://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.pngadmin2021-09-13 16:20:162026-02-13 18:17:55Hojun Son
https://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.png00Shriram Ramanathanhttps://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.pngShriram Ramanathan2021-03-04 12:26:422025-08-21 17:23:26First experimental demonstration of robust HZO/Ga2O3 ferroelectric field-effect transistors as synaptic devices for artificial intelligence applications, J. Noh, H. Bae, J. Li, Y. Luo, Y. Qu, T. J. Park, M. Si, X. Chen, A. R. Charnas, W. Chung, X. Peng, S. Ramanathan, S. Yu and P. D. Ye, IEEE Transactions on Electron Devices, 68, 2515 (2021)
https://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.png00Shriram Ramanathanhttps://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.pngShriram Ramanathan2020-05-08 13:23:472025-08-21 17:23:26In vivo glutamate sensing inside the mouse brain with perovskite nickelate – nafion heterostructures, Y. Sun, T. N. H. Nguyen, A. Anderson, X. Cheng, T. E. Gage, J. Lim, Z. Zhang, H. Zhou, F. Rodolakis, Z. Zhang, I. Arslan, S. Ramanathan, H. Lee and A. A. Chubykin, ACS Applied Materials and Interfaces, 12, 24564 (2020)
https://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.png00Shriram Ramanathanhttps://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.pngShriram Ramanathan2020-04-08 01:47:042025-08-21 17:23:26You Zhou appointed Assistant Professor in the School of Engineering at University of Maryland. Congrats!
https://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.png00Shriram Ramanathanhttps://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.pngShriram Ramanathan2018-01-20 19:58:272025-08-21 17:23:27Limiting optical diodes enabled by the phase transition of vanadium dioxide, C. Wan, E. Horak, J. King, J. Salman, Z. Zhang, Y. Zhou, P. Roney, B. Gundlach, S. Ramanathan, R. Goldsmith and M. A. Kats, ACS Photonics, 5, 2688 (2018)
https://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.png00Shriram Ramanathanhttps://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.pngShriram Ramanathan2017-12-21 21:56:532025-08-21 17:23:27Quantum crystals can learn and forget
https://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.png00Shriram Ramanathanhttps://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.pngShriram Ramanathan2017-12-20 18:19:582025-08-21 17:23:27Perovskite nickelates as electric-field sensors in salt water, Z. Zhang, D. Schwanz, B. Narayanan, M. Kotiuga, J. A. Dura, M. Cherukara, H. Zhou, J. W. Freeland, J. Li, R. Sutarto, F. He, C. Wu, J. Zhu, Y. Sun, K. Ramadoss, S. Nonnenmann, N. Yu, R. Comin, K. M. Rabe, S. K. R. S. Sankaranarayanan and S. Ramanathan, Nature, doi:10.1038/nature25008, 2017
https://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.png00Shriram Ramanathanhttps://shriram-ramanathan.org/wp-content/uploads/2025/08/RNBSE_H_RED_RGB-300x61.pngShriram Ramanathan2017-10-28 23:53:072025-08-21 17:23:27Physics and Technology of Electronic Insulator-to-Metal Transition (E-IMT) for High On/Off Ratio and Low Voltage in Device Applications, J. Lin, K. Alam, L. Ocola, Z. Zhang, S. Datta, S. Ramanathan, S. Guha, IEEE International Electron Devices Meeting, IEDM, 23.4.1 – 23.4.4 (2017)