Electronic granularity and the work function of transparent conducting ZnO:Al thin films, R. Jaramillo and S. Ramanathan, Advanced Functional Materials, 21, 4068 (2011)

High current density monolayer CdSe/ZnS quantum dot light emiting devices with oxide electrodes, E. Likovich, R. Jaramillo, K. J. Russell, E. Hu, S. Ramanathan and V. Narayanamurti, Advanced Materials, 23, 4521 (2011)

Oxide electronics utilizing ultrafast metal-insulator transitions, Z. Yang, C. Ko and S. Ramanathan, Annual Reviews of Materials Research, 41, 337 (2011)

Scalable nanostructured membranes for solid oxide fuel cells, M. Tsuchiya, B.K. Lai and S. Ramanathan, Nature Nanotechnology, 6, 282 (2011)

On the relationship between non-stoichiometry and passivity breakdown in ultra-thin oxides formed on Al and Al-alloy surfaces, Chia-Lin Chang, Harvard University, 2010

A new single element phase transition memory, M. Kim, S.H. Lee, C. Ko, S. Ramanathan, J.W. Lee and S. Tiwari, Tech. Dig. IEEE Nano, p. 439, 2010

Thermal conductivity and dynamic heat capacity across the metal-insulator transition in thin film VO2, D. Oh, C. Ko, S. Ramanathan and D.G. Cahill, Applied Physics Letters, 96, 151906, 2010

Limits on vanadium oxide Mott metal-insulator transition field effect transistors, S. Hormoz and S. Ramanathan, Solid State Electronics, 54, 654, 2010

Studies on sub-100nm Fluorite-Derivative Oxide Films: Structural Evolution, Electrical Properties and Photon Effects, Masaru Tsuchiya, Harvard University, 2009