About Shriram Ramanathan

This author has not written his bio yet.
But we are proud to say that Shriram Ramanathan contributed 163 entries already.

Entries by Shriram Ramanathan

Proton distribution visualization in perovskite devices utilizing nanofocused X-rays, I. A. Zaluzhnyy, P. O. Sprau, R. Tran, Q. Wang, H. T. Zhang, Z. Zhang, T. J. Park, N. Hua, B. Stoychev, M. J. Cherukara, M. V. Holt, E. Nazraretski, X. Huang, H. Yan, A. Pattammattel, Y. S. Chu, S. P. Ong, S. Ramanathan, O. Shpyrko and A. Frano, Physical Review Materials, 5, 095003 (2021)

August 2021

SLAC highlights Sood et al VO2 paper

July 2021

https://www6.slac.stanford.edu/news/2021-07-15-scientists-take-first-snapshots-ultrafast-switching-quantum-electronic-device.aspx

Universal phase dynamics in VO2 switches revealed by ultrafast operando diffraction, A. Sood, X. Shen, Y. Shi, S. Kumar, S. J. Park, M. Zajac, Y. Sun, L. Q. Chen, S. Ramanathan, X. Wang, W. C. Chueh and A. M. Lindenberg, Science, 373, 352 (2021)

July 2021

Kats et al VO2 paper makes the cover

June 2021

cover image

Ultrathin broadband reflective optical limiter, C. Wan, Z. Zhang, J. Salman, J. King, Y. Xiao, Z. Yu, A. Shahsafi, R. Wambold, S. Ramanathan and M. A. Kats, Laser and Photonics Reviews, in press (https://doi.org/10.1002/lpor.202100001, 2021)

May 2021

Effective reduction of PdCoO2 thin films via hydrogenation and sign tunable anomalous Hall effect, G. Rimal, C. Schmidt, H. Hijazi, L. C. Feldman, Y. Liu, E. Skoropota, J. Lapano, M. Brahlek, D. Mukherjee, R. R. Unocic, M. F. Chisholm, Y. Sun, H. Yu, S. Ramanathan, C. J. Sun, H. Zhou and S. Oh, Physical Review Materials 5, L052001 (2021)

April 2021

Zhen Zhang appointed faculty member in Xian Jiaotong University. Congrats!

April 2021

A. Tripathi, J. John, S. Kruk, Z. Zhang, H. Nguyen, L. Berguiga, P. R. Romeo, R. Orobtchouk, S. Ramanathan, Y. Kivshar and S. Cueff, Tunable Mie-resonant dielectric metasurfaces based on VO2 phase-transition materials, ACS Photonics, 8, 1206 (2021)

March 2021

First experimental demonstration of robust HZO/Ga2O3 ferroelectric field-effect transistors as synaptic devices for artificial intelligence applications, J. Noh, H. Bae, J. Li, Y. Luo, Y. Qu, T. J. Park, M. Si, X. Chen, A. R. Charnas, W. Chung, X. Peng, S. Ramanathan, S. Yu and P. D. Ye, IEEE Transactions on Electron Devices, 68, 2515 (2021)

March 2021

Novel MEMS actuators based on metal-insulator transition, Chengzi Huang, Purdue University, 2020

January 2021